In their experiment, the team used a semiconductor called aluminum gallium arsenide instead of ultracold atoms to create the supersolid. When laser light struck the ridges of the aluminum gallium ...

Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

generates single photos by a single quantum dot inside the photonic waveguides (red), which are fabricated on top of crystalline gallium arsenide- (GaAs-) aluminium gallium arsenide (Al0.2Ga0.8As ...

The researchers built the device with an electron-blocking layer made of aluminium gallium arsenide phosphide (AlGaAsP), instead of more commonly used gallium indium phosphide (GaInP), that was ...

Today heterostructures composed of silicon and silicon germanium, or gallium arsenide and aluminium gallium arsenide, are used in low-noise high-frequency amplifiers in cell phones and satellite ...

The cell incorporates subcells made of aluminum gallium indium phosphide (AlGaInP), aluminum gallium arsenide (AlGaAs), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs).

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.