Maxwell Labs envisions a photonic cold plate, a light-based alternative or complement to existing water and air cooling ...

Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

The researchers built the device with an electron-blocking layer made of aluminium gallium arsenide phosphide ... the paper Current-Matched III–V/Si Epitaxial Tandem Solar Cells with 25.0% ...

The fab is facilitized for up to 10 epitaxial tools and previously produced 2-inch to 6-inch indium phosphide and gallium arsenide wafers. Located six miles from the University of Illinois at ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

The cell incorporates subcells made of aluminum gallium indium phosphide (AlGaInP), aluminum gallium arsenide (AlGaAs ... stress-induced defects on the epitaxial materials.

The fab is facilitized for up to 10 epitaxial tools and previously produced 2-inch to 6-inch indium phosphide and gallium arsenide wafers. Located six miles from the University of Illinois at ...