Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

GaN and GaAs are used for a variety of transistors, including bipolar junction (BJT), enhancement-mode MOSFET and high electron mobility (HEMT). See gallium nitride and gallium arsenide.

The researchers built the device with an electron-blocking layer made of aluminium gallium arsenide phosphide (AlGaAsP), instead of more commonly used gallium indium phosphide (GaInP), that was ...

HEMTs utilize advanced semiconductor induction ... the market is bifurcated into Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others. Gallium Nitride (GaN) segment ...

material which could improve the efficiency of multi-junction solar cells based on III-V elements such as gallium arsenide. In the paper Uprooting defects to enable high-performance III–V ...