Consequently, a gallium arsenide wafer, or substrate, is semi-insulating, whereas a silicon wafer is semi-conducting. Gallium arsenide also offers a wider range of operating temperatures than silicon ...

Researchers at Imec have found a way to grow lasers directly on silicon Imec’s lasers use gallium arsenide ... to demonstrate ...

The most optimal material for solid-state lasers in photonics is gallium-arsenide (GaAs), but due ... grown on industry-standard 300 mm silicon wafers. The trick was to accept the lattice mismatch ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

The fab is facilitized for up to 10 epitaxial tools and previously produced 2-inch to 6-inch indium phosphide and gallium arsenide wafers. Located six miles from the University of Illinois at ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

The fab is facilitized for up to 10 epitaxial tools and previously produced 2-inch to 6-inch indium phosphide and gallium arsenide wafers. Located six miles from the University of Illinois at ...

The most optimal material for solid-state lasers in photonics is gallium-arsenide (GaAs), but due ... grown on industry-standard 300 mm silicon wafers. The trick was to accept the lattice mismatch ...

The fab is facilitized for up to 10 epitaxial tools and previously produced 2-inch to 6-inch indium phosphide and gallium arsenide wafers. Located six miles from the University of Illinois at ...