TSMC unveils its A14 process technology featuring 2nd generation GAA nanosheet transistors and NanoFlex Pro DTCO with ...

Intel plans to build its upcoming Nova Lake CPUs on TSMC's forthcoming 2nm semiconductor process node, according to Economic ...

creating a new concept called gate-all-around field-effect transistors, which are shortened to GAA transistors, or GAAFETs. Gate-all-around transistors use stacked nanosheets. These separate ...

A14 will harness 2nd Gen GAA nanosheet transistors, enhanced by its NanoFlex Pro technology, which enables greater ...

The Feynman generation and those that follow will likely adopt semiconductor nodes featuring gate-all-around (GAA) transistors – the next evolution in transistor technology after FinFET.

Nvidia's Jensen Huang said during a Q&A session at GTC that next-generation process technologies relying on gate-all-around (GAA) transistors will likely bring about a 20% performance boost for ...

Leading-edge fabs have been working on new transistor designs, known as Gate-All-Around (GAA), for some time. We expect these designs to enter production in 2025 at TSMC and possibly Intel.

Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking ...